Group of Crystallization from High-Temperature Solutions

Head: Gennadii Anatol'evich Emelchenko

Tel.: 2-29-48

E-mail: emelch@issp.ac.ru

Main research directions:

1. Phase equilibria in oxide systems and growth of single crystals
   • High-T_c superconductors (single crystals, targets, powders, ceramics)
     • ReBa₂Cu₃O_7-x
     • La₂CuO₄(Sr)
     • Nd₂CuO₄(Ce)
     • Bi₂Sr₂CaCu₂O₈ (Bi-2212)
   • Ferromagnetics (single crystals - UHF devices (filters, modulators etc.))
     • Y₃Fe₅O₁2 (Bi,Ga)
     • Bi_3-xCa_2xFe_5-xV_xO₁₂(In,Nb)
   • Scintillators (single crystals)
     • ZnO
     • PbF₂ rhombic
     • PbWO₄
2. Synthetic opal films nanoclusters, metalattices, photonic crystals
   • Thin films of the ordered SiO₂-microspheres
   • 3D–nanolattice of metals and semiconductors
   • A new family of optoelectronic devices (LED, lasers etc.)
3. Growth of silicon carbide single crystals
   • SiC single crystals-semiconductor is "silicon" of 21 century
4. Production and cousolidation of nanomono-crystalline powders (the particle sizes of 20–250 nm)
   • Cu, Ni, Ti, Ag, Fe (nanopowders)
   • CuO, NiO, Al₂O₃, CeO₂ (metal nanocomposites with high yield stress (>1100 MPa), hardness (~50 HRc), toughness (~70 MPaxm1/2)
   • YBa₂Cu₃O_7-x (metal nanocomposites with high yield stress (>1100 MPa), hardness (~50 HRc), toughness (~70 MPaxm1/2)
   • NdBa₂Cu₃O_7-x (metal nanocomposites with high yield stress (>1100 MPa), hardness (~50 HRc), toughness (~70 MPaxm1/2)
5. New processes of growth from the melt of silicon and silicon-carbon composites and products of them
   • Tubular resistive heaters for oxide ambient, supports, SiC friction pairs

Staff:

• Scientists
  • G.A. Emelchenko
  • A.A. Zhokhov
  • I.A. Karpov
  • A.B. Kulakov
  • V.M. Masalov

Publications