I. Доклады по работам, направляемым в печать:
1. М. Khorosheva, V. Kveder, A. Tereshchenko “Impact of iron atoms on the electronic properties of n-silicon with dislocations”, Physica Status Solidi a».
2. V. Kveder, М. Khorosheva “Interaction of chromium atoms with dislocations and as-grown vacancy-complexes and its impact on the electronic properties of FZ-Si”, «Physica Status Solidi b».
II. Закрытая часть.